IAUCN08S7L013ATMA1 vs ISC045N03L5SATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN08S7L013ATMA1 dari Infineon dan ISC045N03L5SATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUCN08S7L013ATMA1 ISC045N03L5SATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 —
Channel Type N-Channel —
Drain-Source Voltage (VDS) 80 V 30 V
Maximum On-Resistance (RDS(on) max) 1.26 mΩ —
Arus Alir Berlanjut (TC=25°C) [DATA_NEEDED: continuous drain current at TC=25C] —
Continuous Drain Current (TJ) 293 A —
Power Dissipation (TC) 219 W —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage range] —
Gate Drive Voltage (typical) 10 V —
Rentang Suhu Kerja -55 °C to +175 °C -55 °C to +150 °C
Paket PG-TDSON-8-53 (TDSON-8 FL) SuperSO8 5x6 (PG-TDSON-8-6)
Tipe Mounting Surface Mount Surface Mount
Level MSL [DATA_NEEDED: MSL rating] —
Qualification AEC-Q101 (automotive) —
Status RoHS Compliant Compliant
Packaging Tape & Reel (suffix ATMA1) —
Part Number — ISC045N03L5SATMA1
Tipe Transistor — N-Channel MOSFET
Technology — OptiMOS 5 / Trench
Continuous Drain Current (ID) at TA=25°C — 18 A
Continuous Drain Current (ID) at TC=25°C — 63 A
On-Resistance RDS(on) max @ VGS=10V — 4.5 mΩ
Gate-Source Threshold Voltage (VGS(th)) — 2 V @ ID=250 µA
Gate-Source Voltage (VGS) max — ±20 V
Total Gate Charge (Qg) — 13 nC @ VGS=10 V
Input Capacitance (Ciss) — 870 pF @ VDS=15 V
Power Dissipation (PD) at TA=25°C — 2.5 W
Power Dissipation (PD) at TC=25°C — 30 W

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon