IAUCN08S7L013ATMA1 vs ISC045N03L5SATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUCN08S7L013ATMA1 sa pamamagitan ng Infineon at ISC045N03L5SATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUCN08S7L013ATMA1 - 80V N-Channel OptiMOS 7 MOSFET | Infineon
IAUCN08S7L013ATMA1 ✓ NakahandaInfineon
ISC045N03L5SATMA1 - 30V 4.5mΩ OptiMOS 5 N-Ch MOSFET | Infineon
ISC045N03L5SATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUCN08S7L013ATMA1 | ISC045N03L5SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | 30 V |
| Maximum On-Resistance (RDS(on) max) | 1.26 mΩ | — |
| Patuloy na Drain Current (TC=25°C) | [DATA_NEEDED: continuous drain current at TC=25C] | — |
| Continuous Drain Current (TJ) | 293 A | — |
| Power Dissipation (TC) | 219 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage range] | — |
| Gate Drive Voltage (typical) | 10 V | — |
| Hanay ng Temperature na Operasyon | -55 °C to +175 °C | -55 °C to +150 °C |
| Packhaging | PG-TDSON-8-53 (TDSON-8 FL) | SuperSO8 5x6 (PG-TDSON-8-6) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | [DATA_NEEDED: MSL rating] | — |
| Qualification | AEC-Q101 (automotive) | — |
| Tindminan RoHS | Compliant | Compliant |
| Packaging | Tape & Reel (suffix ATMA1) | — |
| Part Number | — | ISC045N03L5SATMA1 |
| Uri ng Transistor | — | N-Channel MOSFET |
| Technology | — | OptiMOS 5 / Trench |
| Continuous Drain Current (ID) at TA=25°C | — | 18 A |
| Continuous Drain Current (ID) at TC=25°C | — | 63 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.5 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | 2 V @ ID=250 µA |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Total Gate Charge (Qg) | — | 13 nC @ VGS=10 V |
| Input Capacitance (Ciss) | — | 870 pF @ VDS=15 V |
| Power Dissipation (PD) at TA=25°C | — | 2.5 W |
| Power Dissipation (PD) at TC=25°C | — | 30 W |