IGL65R080D2XUMA1 vs IGLR70R270D2SXUMA1 Comparison
Detailed side-by-side comparison of IGL65R080D2XUMA1 by Infineon and IGLR70R270D2SXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IGL65R080D2XUMA1
IGL65R080D2XUMA1 - 650V 80mΩ CoolGaN G5 Transistor | Infineon
IGL65R080D2XUMA1 ✓ ActiveInfineon
IGLR70R270D2SXUMA1
IGLR70R270D2SXUMA1 - 700V GaN Transistor, 270mΩ CoolGaN G5 | Infineon
IGLR70R270D2SXUMA1 ✓ ActiveSpecification Comparison
| Parameter | IGL65R080D2XUMA1 | IGLR70R270D2SXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.97 | $2.13 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolGaN G5 | CoolGaN™ G5 |
| Transistor Type | N-Channel GaN HEMT (enhancement-mode) | — |
| Drain-Source Voltage (VDS) | 650 V | 700 V |
| Continuous Drain Current (ID, Tc) | 18 A | 7.3 A |
| Power Dissipation (PD, Tc) | 81 W | 28 W |
| On-Resistance RDS(on) | 80 mΩ (typical) | — |
| Package | PG-TSON-8-U06 (ThinPAK 8x8) | PG-TSON-8-8 (ThinPAK) |
| Mounting Type | Surface Mount, wettable flank | Surface Mount |
| Operating Temperature Range | -55 °C to +150 °C (TJ) | -40C to +150C (junction) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Technology | GaN-on-Si, 200 mm wafer | Gallium Nitride (GaN) HEMT, enhancement-mode |
| Typical Applications | SMPS, totem-pole PFC, LLC, USB-PD adapters | — |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020, where stated) | — |
| Channel Type | — | N-Channel |
| On-State Resistance (RDS(on), typ.) | — | 270 mΩ |
| Gate Drive | — | 0 to 12 V (enhancement-mode, internal gate diode) |
| Wafer Process | — | 200 mm (8-inch) GaN-on-Si |
| Reverse Recovery Charge (Qrr) | — | 0 nC (no body diode) |