IGLR70R200D2SXUMA1 vs IGLD60R070D1AUMA3 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IGLR70R200D2SXUMA1 disebabkan oleh Infineon dan IGLD60R070D1AUMA3 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IGLR70R200D2SXUMA1 | IGLD60R070D1AUMA3 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | CoolGaN G5 | — |
| Channel Type | N-Channel | — |
| Technology | GaN HEMT (E-mode, enhancement-mode) | GaN HEMT (enhancement-mode, normally-off) |
| Drain-Source Voltage (VDS) | 700 V | 600 V |
| Continuous Drain Current (ID, Tc) | 9.3 A | 15 A |
| Power Dissipation (PD, Tc) | 34 W | 114 W |
| On-Resistance (RDS(on), max) | 200 mΩ | — |
| Total Gate Charge (Qg) | 1.26 nC | [DATA_NEEDED: Qg total] |
| Output Capacitance (Coss) | 91 pF | — |
| Reverse Transfer Capacitance (Crss) | 0.21 pF | — |
| Gate Threshold Voltage (VGS(th), typ) | 1.2 V | — |
| Gambaran Suhu Operasi | -40 °C to +150 °C | — |
| Kemasan | PG-TSON-8-8 (surface mount, ThinPAK top-cooled) | PG-LSON-8-1 (LSON-8 with exposed pad) |
| RoHS | Compliant | — |
| On-Resistance (RDS(on)) | — | 70 mΩ (typical, VGS = 10 V) |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Output Charge (Qoss) | — | [DATA_NEEDED: Qoss] |
| Reverse Recovery Charge (Qrr) | — | Near zero (GaN technology) |
| Input Capacitance (Ciss) | — | 380 pF @ 400 V (per Utmel) |
| Jenis Pemasangan | — | Surface Mount |
| Aras MSL | — | 3 |
| Boson Bebas | — | Yes |
| Status RoHS | — | Compliant |
| Operating Temperature (Tj) | — | [DATA_NEEDED: Tj max] |
| Series | — | CoolGaN™ |
| Polarity | — | N-Channel |
| Packaging | — | Tape & Reel |
| Factory Pack Quantity | — | 3000 |