IPB025N10N3GATMA1 vs IPB107N20N3GATMA1 Comparison
Detailed side-by-side comparison of IPB025N10N3GATMA1 by Infineon and IPB107N20N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB025N10N3GATMA1 - 100V 180A OptiMOS 3 N-Channel MOSFET | Infineon
IPB025N10N3GATMA1 β ActiveInfineon
IPB107N20N3GATMA1 - 200V 88A OptiMOS 3 N-Channel MOSFET | Infineon
IPB107N20N3GATMA1 β ActiveSpecification Comparison
| Parameter | IPB025N10N3GATMA1 | IPB107N20N3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.74 | $1.18 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 100 V | 200 V |
| Continuous Drain Current (ID) at Tc | 180 A | 88 A |
| Power Dissipation (PD) at Tc | 300 W | β |
| RDS(on) Typical at VGS=10V, ID=100A | 2.5 mΞ© | β |
| Gate-Source Threshold Voltage (VGS(th)) | 3.5 V | β |
| Input Capacitance (Ciss) | 2.58 nF | β |
| Gate Charge (Qg) Typical | [DATA_NEEDED: Qg value] | β |
| Package | PG-TO263-7 (D2PAK-7) 6+Tab | PG-TO263-3 (D2PAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C (junction) | [DATA_NEEDED: Tj max and operating range] |
| Technology | OptiMOS 3 trench MOSFET | OptiMOS 3 trench MOSFET |
| MSL Level | 1 (unlimited) | β |
| RoHS Status | Compliant | Compliant |
| Halogen-Free | Yes | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 3 |
| Transistor Type | β | N-Channel MOSFET |
| Maximum Power Dissipation (Pd) at Tc | β | 300 W |
| On-Resistance RDS(on) at VGS=10V | β | 9.6 milliohm (typical, per third-party listing) |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical/range] |
| Pin Count | β | 3 (Drain, Source, Gate) + Tab |