IPB037N06N3GATMA1 vs IPB100N04S4H2ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPB037N06N3GATMA1 sa pamamagitan ng Infineon at IPB100N04S4H2ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPB037N06N3GATMA1 - 60V 90A 3.7mOhm OptiMOS 3 N-MOSFET D2PAK | Infineon
IPB037N06N3GATMA1 ✓ NakahandaInfineon
IPB100N04S4H2ATMA1 - 40V 100A OptiMOS-T2 N-Channel MOSFET | Infineon
IPB100N04S4H2ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPB037N06N3GATMA1 | IPB100N04S4H2ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPB037N06N3GATMA1 | — |
| Technology | OptiMOS 3 (N-channel, enhancement mode) | OptiMOS-T2 (trench gate) |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 60 V | — |
| Continuous Drain Current (ID) at Tc | 90 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) Max | 3.7 mOhm at VGS=10V | — |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 3.5 V | [DATA_NEEDED: VGS(th) typical] |
| Total Power Dissipation (Pd) at Tc | 188 W | — |
| Hanay ng Temperature na Operasyon | -55 C to +175 C (junction) | — |
| Packhaging / Kaso | PG-TO263-3 (D2PAK, surface mount) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Gate Charge (Qg) Typ | [DATA_NEEDED: gate charge value] | — |
| Tindminan RoHS | Compliant | — |
| Level ng MSL | 1 (unlimited) | MSL1 (up to 260C peak reflow) |
| Drain Tab Connection | Tab electrically tied to drain | — |
| FET Type | — | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: max VGS rating] |
| RDS(on) at VGS=10V | — | 2.4 mΩ typical |
| Maximum Power Dissition (PD) at TC=25C | — | 115 W |
| Temperature ng Junction na Operasyon | — | -55C to +175C |
| Storage Temperature | — | [DATA_NEEDED: storage temp range] |
| Packhaging | — | PG-TO263-3-2 (D2PAK-2) Surface Mount |
| Avalanche Energy (EAS) | — | 100% avalanche tested |
| Automotive Qualification | — | AEC-Q101 qualified |
| RoHS Compliance | — | Compliant (Green Product) |