IPB037N06N3GATMA1 vs IPB100N04S4H2ATMA1 比較

詳細並排比較 IPB037N06N3GATMA1 由 Infineon 與 IPB100N04S4H2ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IPB037N06N3GATMA1 IPB100N04S4H2ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies —
Part Number IPB037N06N3GATMA1 —
Technology OptiMOS 3 (N-channel, enhancement mode) OptiMOS-T2 (trench gate)
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) Max 60 V —
Continuous Drain Current (ID) at Tc 90 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) Max 3.7 mOhm at VGS=10V —
Gate Threshold Voltage (VGS(th)) 2.0 V to 3.5 V [DATA_NEEDED: VGS(th) typical]
Total Power Dissipation (Pd) at Tc 188 W —
工作溫度範圍 -55 C to +175 C (junction) —
封裝 / 外殼 PG-TO263-3 (D2PAK, surface mount) —
安裝類型 Surface Mount Surface Mount
Gate Charge (Qg) Typ [DATA_NEEDED: gate charge value] —
RoHS 狀態 Compliant —
MSL 等級 1 (unlimited) MSL1 (up to 260C peak reflow)
Drain Tab Connection Tab electrically tied to drain —
FET Type — N-Channel, Enhancement Mode
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at TC=25C — 100 A
Gate-Source Voltage (VGS) — [DATA_NEEDED: max VGS rating]
RDS(on) at VGS=10V — 2.4 mΩ typical
Maximum Power Dissition (PD) at TC=25C — 115 W
工作接面溫度 — -55C to +175C
Storage Temperature — [DATA_NEEDED: storage temp range]
封裝 — PG-TO263-3-2 (D2PAK-2) Surface Mount
Avalanche Energy (EAS) — 100% avalanche tested
Automotive Qualification — AEC-Q101 qualified
RoHS Compliance — Compliant (Green Product)

資料表與資源

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