IPB037N06N3GATMA1 vs IPB100N04S4H2ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB037N06N3GATMA1 disebabkan oleh Infineon dan IPB100N04S4H2ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB037N06N3GATMA1 IPB100N04S4H2ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number IPB037N06N3GATMA1 —
Technology OptiMOS 3 (N-channel, enhancement mode) OptiMOS-T2 (trench gate)
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) Max 60 V —
Continuous Drain Current (ID) at Tc 90 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) Max 3.7 mOhm at VGS=10V —
Gate Threshold Voltage (VGS(th)) 2.0 V to 3.5 V [DATA_NEEDED: VGS(th) typical]
Total Power Dissipation (Pd) at Tc 188 W —
Gambaran Suhu Operasi -55 C to +175 C (junction) —
Kemasan / Case PG-TO263-3 (D2PAK, surface mount) —
Jenis Pemasangan Surface Mount Surface Mount
Gate Charge (Qg) Typ [DATA_NEEDED: gate charge value] —
Status RoHS Compliant —
Aras MSL 1 (unlimited) MSL1 (up to 260C peak reflow)
Drain Tab Connection Tab electrically tied to drain —
FET Type — N-Channel, Enhancement Mode
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at TC=25C — 100 A
Gate-Source Voltage (VGS) — [DATA_NEEDED: max VGS rating]
RDS(on) at VGS=10V — 2.4 mΩ typical
Maximum Power Dissition (PD) at TC=25C — 115 W
Suhu Hubungan Operasi — -55C to +175C
Storage Temperature — [DATA_NEEDED: storage temp range]
Kemasan — PG-TO263-3-2 (D2PAK-2) Surface Mount
Avalanche Energy (EAS) — 100% avalanche tested
Automotive Qualification — AEC-Q101 qualified
RoHS Compliance — Compliant (Green Product)

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