IPB072N15N3GATMA1 vs IPB200N25N3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB072N15N3GATMA1 disebabkan oleh Infineon dan IPB200N25N3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB072N15N3GATMA1 IPB200N25N3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology OptiMOS 3 (trench MOSFET) OptiMOS 3 (Trench)
Drain-Source Voltage (V_DS) 150 V 250 V
Continuous Drain Current (I_D, Tc=25C) 100 A —
Continuous Drain Current (I_D, Tc=100C) [DATA_NEEDED: I_D at Tc=100C] —
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed I_DM] —
Maximum Power Dissipation (P_D, Tc=25C) 300 W —
R_DS(on) typical at VGS=10V 7.2 mOhm —
R_DS(on) max at VGS=10V [DATA_NEEDED: max R_DS(on) at VGS=10V] —
Gate-Source Voltage (V_GS) max +/-20 V —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) typical] [DATA_NEEDED: V_GS(th) typical/max]
Total Gate Charge (Q_g) [DATA_NEEDED: Q_g typical at VGS=10V] —
Gambaran Suhu Operasi -55 C to +175 C -55C to +175C
Kemasan PG-TO263-3-2 (D2PAK-2, 3 pins + tab) PG-TO263-3 (D2PAK)
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant Compliant
Avalanche Energy Rated Yes (single-pulse E_AS) —
Intrinsic Body Diode Yes (low Q_rr, sync-rectifier capable) —
Manufacturer Ordering Code Suffix GATMA1 (tape and reel, 1000 pcs) —
Manufacturer — Infineon Technologies
Part Family — OptiMOS 3
Jenis Transistor — N-Channel MOSFET
Continuous Drain Current (I_D) at T_C — 64 A
Power Dissipation (P_D) at T_C — 300 W
R_DS(on) max at V_GS=10V — 20 mOhm
Gate Charge (Q_g) — [DATA_NEEDED: Q_g typical]
Boson Bebas — Yes (per Infineon OptiMOS family datasheet)
Aras MSL — 1 (per JEDEC J-STD-020)
Kiraan Pin — 3 (2+tab)

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