IPB100N04S4H2ATMA1 vs IPB037N06N3GATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IPB100N04S4H2ATMA1 tarafından Infineon ve IPB037N06N3GATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
IPB100N04S4H2ATMA1 - 40V 100A OptiMOS-T2 N-Channel MOSFET | Infineon
IPB100N04S4H2ATMA1 ✓ AktifInfineon
IPB037N06N3GATMA1 - 60V 90A 3.7mOhm OptiMOS 3 N-MOSFET D2PAK | Infineon
IPB037N06N3GATMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | IPB100N04S4H2ATMA1 | IPB037N06N3GATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| FET Type | N-Channel, Enhancement Mode | — |
| Technology | OptiMOS-T2 (trench gate) | OptiMOS 3 (N-channel, enhancement mode) |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current value] |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: max VGS rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | 2.0 V to 3.5 V |
| RDS(on) at VGS=10V | 2.4 mΩ typical | — |
| Maximum Power Dissition (PD) at TC=25C | 115 W | — |
| İşletim Jant Sıcaklığı | -55C to +175C | — |
| Storage Temperature | [DATA_NEEDED: storage temp range] | — |
| Paket | PG-TO263-3-2 (D2PAK-2) Surface Mount | — |
| Montaj Türü | Surface Mount | Surface Mount |
| MSL Seviyesi | MSL1 (up to 260C peak reflow) | 1 (unlimited) |
| Avalanche Energy (EAS) | 100% avalanche tested | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS Compliance | Compliant (Green Product) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPB037N06N3GATMA1 |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 60 V |
| Continuous Drain Current (ID) at Tc | — | 90 A |
| On-Resistance RDS(on) Max | — | 3.7 mOhm at VGS=10V |
| Total Power Dissipation (Pd) at Tc | — | 188 W |
| İşletim Sıcaklığı Aralığı | — | -55 C to +175 C (junction) |
| Paket / Kas | — | PG-TO263-3 (D2PAK, surface mount) |
| Gate Charge (Qg) Typ | — | [DATA_NEEDED: gate charge value] |
| RoHS Durumu | — | Compliant |
| Drain Tab Connection | — | Tab electrically tied to drain |