IPB100N04S4H2ATMA1 vs IPB037N06N3GATMA1 比較

詳細並排比較 IPB100N04S4H2ATMA1 由 Infineon 與 IPB037N06N3GATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IPB100N04S4H2ATMA1 IPB037N06N3GATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel, Enhancement Mode —
Technology OptiMOS-T2 (trench gate) OptiMOS 3 (N-channel, enhancement mode)
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at TC=25C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current value]
Gate-Source Voltage (VGS) [DATA_NEEDED: max VGS rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] 2.0 V to 3.5 V
RDS(on) at VGS=10V 2.4 mΩ typical —
Maximum Power Dissition (PD) at TC=25C 115 W —
工作接面溫度 -55C to +175C —
Storage Temperature [DATA_NEEDED: storage temp range] —
封裝 PG-TO263-3-2 (D2PAK-2) Surface Mount —
安裝類型 Surface Mount Surface Mount
MSL 等級 MSL1 (up to 260C peak reflow) 1 (unlimited)
Avalanche Energy (EAS) 100% avalanche tested —
Automotive Qualification AEC-Q101 qualified —
RoHS Compliance Compliant (Green Product) —
Manufacturer — Infineon Technologies
Part Number — IPB037N06N3GATMA1
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) Max — 60 V
Continuous Drain Current (ID) at Tc — 90 A
On-Resistance RDS(on) Max — 3.7 mOhm at VGS=10V
Total Power Dissipation (Pd) at Tc — 188 W
工作溫度範圍 — -55 C to +175 C (junction)
封裝 / 外殼 — PG-TO263-3 (D2PAK, surface mount)
Gate Charge (Qg) Typ — [DATA_NEEDED: gate charge value]
RoHS 狀態 — Compliant
Drain Tab Connection — Tab electrically tied to drain

資料表與資源

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