IPB100N04S4H2ATMA1 vs IPB037N06N3GATMA1 Perbandingan
Perbandingan bersamaan detil IPB100N04S4H2ATMA1 dari Infineon dan IPB037N06N3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPB100N04S4H2ATMA1 - 40V 100A OptiMOS-T2 N-Channel MOSFET | Infineon
IPB100N04S4H2ATMA1 ✓ AktifInfineon
IPB037N06N3GATMA1 - 60V 90A 3.7mOhm OptiMOS 3 N-MOSFET D2PAK | Infineon
IPB037N06N3GATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IPB100N04S4H2ATMA1 | IPB037N06N3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel, Enhancement Mode | — |
| Technology | OptiMOS-T2 (trench gate) | OptiMOS 3 (N-channel, enhancement mode) |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current value] |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: max VGS rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | 2.0 V to 3.5 V |
| RDS(on) at VGS=10V | 2.4 mΩ typical | — |
| Maximum Power Dissition (PD) at TC=25C | 115 W | — |
| Suhu Hubung Kerja | -55C to +175C | — |
| Storage Temperature | [DATA_NEEDED: storage temp range] | — |
| Paket | PG-TO263-3-2 (D2PAK-2) Surface Mount | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | MSL1 (up to 260C peak reflow) | 1 (unlimited) |
| Avalanche Energy (EAS) | 100% avalanche tested | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS Compliance | Compliant (Green Product) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPB037N06N3GATMA1 |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 60 V |
| Continuous Drain Current (ID) at Tc | — | 90 A |
| On-Resistance RDS(on) Max | — | 3.7 mOhm at VGS=10V |
| Total Power Dissipation (Pd) at Tc | — | 188 W |
| Rentang Suhu Kerja | — | -55 C to +175 C (junction) |
| Paket / Case | — | PG-TO263-3 (D2PAK, surface mount) |
| Gate Charge (Qg) Typ | — | [DATA_NEEDED: gate charge value] |
| Status RoHS | — | Compliant |
| Drain Tab Connection | — | Tab electrically tied to drain |