IPB100N04S4H2ATMA1 vs IPB037N06N3GATMA1 तुलना
विस्तृत दोनों ओर की तुलना IPB100N04S4H2ATMA1 द्वारा Infineon और IPB037N06N3GATMA1 द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Infineon
IPB100N04S4H2ATMA1 - 40V 100A OptiMOS-T2 N-Channel MOSFET | Infineon
IPB100N04S4H2ATMA1 ✓ सक्रियInfineon
IPB037N06N3GATMA1 - 60V 90A 3.7mOhm OptiMOS 3 N-MOSFET D2PAK | Infineon
IPB037N06N3GATMA1 ✓ सक्रियविशेषता तुलना
| पैरामीटर | IPB100N04S4H2ATMA1 | IPB037N06N3GATMA1 |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| FET Type | N-Channel, Enhancement Mode | — |
| Technology | OptiMOS-T2 (trench gate) | OptiMOS 3 (N-channel, enhancement mode) |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current value] |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: max VGS rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | 2.0 V to 3.5 V |
| RDS(on) at VGS=10V | 2.4 mΩ typical | — |
| Maximum Power Dissition (PD) at TC=25C | 115 W | — |
| ऑपरेटिंग जंक्शन तापमान | -55C to +175C | — |
| Storage Temperature | [DATA_NEEDED: storage temp range] | — |
| पैकेज | PG-TO263-3-2 (D2PAK-2) Surface Mount | — |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| MSL स्तर | MSL1 (up to 260C peak reflow) | 1 (unlimited) |
| Avalanche Energy (EAS) | 100% avalanche tested | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS Compliance | Compliant (Green Product) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPB037N06N3GATMA1 |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 60 V |
| Continuous Drain Current (ID) at Tc | — | 90 A |
| On-Resistance RDS(on) Max | — | 3.7 mOhm at VGS=10V |
| Total Power Dissipation (Pd) at Tc | — | 188 W |
| ऑपरेटिंग तापमान रेंज | — | -55 C to +175 C (junction) |
| पैकेज / केस | — | PG-TO263-3 (D2PAK, surface mount) |
| Gate Charge (Qg) Typ | — | [DATA_NEEDED: gate charge value] |
| RoHS स्थिति | — | Compliant |
| Drain Tab Connection | — | Tab electrically tied to drain |