IPB110P06LMATMA1 vs IPB039N10N3GATMA1 Comparison

Detailed side-by-side comparison of IPB110P06LMATMA1 by Infineon and IPB039N10N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPB110P06LMATMA1 IPB110P06LMATMA1 - P-Ch 60V 100A OptiMOS MOSFET | Infineon

IPB110P06LMATMA1 - P-Ch 60V 100A OptiMOS MOSFET | Infineon

IPB110P06LMATMA1 βœ“ Active

Specification Comparison

Parameter IPB110P06LMATMA1 IPB039N10N3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.31 $2.28
FET Type P-Channel N-Channel
Technology OptiMOS (trench MOSFET) MOSFET (Metal Oxide)
Drain-Source Voltage (VDS) -60 V β€”
Continuous Drain Current (ID) at TC=25C -100 A 160 A
Maximum Power Dissipation (PD) at TC=25C 300 W β€”
On-State Resistance (RDS(on) max) at VGS=10V 11 mOhm @ ID=100A β€”
Gate Threshold Voltage (VGS(th) max) 2 V @ ID=5.55 mA β€”
Gate-Source Voltage (VGS max) +/-20 V β€”
Operating Temperature Range -55 C to +175 C (TJ) -55C to +175C
Package / Case PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) β€”
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-3-2 β€”
Gate Drive Level Logic-level compatible β€”
RoHS Status Compliant β€”
Lead-Free Yes β€”
Drain-to-Source Voltage (VDS) β€” 100 V
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at TC=25C β€” 214 W
On-State Resistance RDS(on) at VGS=10V (typ) β€” 3.9 mOhm
Gate-Source Threshold Voltage VGS(th) β€” [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg typ]
Gate-Drain Charge (Qgd) β€” [DATA_NEEDED: Qgd typ]
Package β€” PG-TO263-7 (D2PAK-7, 6 leads + tab)
MSL Level β€” 1
RoHS / Halogen-Free Status β€” RoHS compliant, halogen-free
Series / Family β€” OptiMOS 3

Datasheets & Resources

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