IPB110P06LMATMA1 vs IPB039N10N3GATMA1 比較
詳細並排比較 IPB110P06LMATMA1 由 Infineon 與 IPB039N10N3GATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IPB039N10N3GATMA1 - 100V 160A OptiMOS 3 N-Channel MOSFET | Infineon
IPB039N10N3GATMA1 ✓ 啟用中規格比較
| 參數 | IPB110P06LMATMA1 | IPB039N10N3GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | P-Channel | N-Channel |
| Technology | OptiMOS (trench MOSFET) | MOSFET (Metal Oxide) |
| Drain-Source Voltage (VDS) | -60 V | — |
| Continuous Drain Current (ID) at TC=25C | -100 A | 160 A |
| Maximum Power Dissipation (PD) at TC=25C | 300 W | — |
| On-State Resistance (RDS(on) max) at VGS=10V | 11 mOhm @ ID=100A | — |
| Gate Threshold Voltage (VGS(th) max) | 2 V @ ID=5.55 mA | — |
| Gate-Source Voltage (VGS max) | +/-20 V | — |
| 工作溫度範圍 | -55 C to +175 C (TJ) | -55C to +175C |
| 封裝 / 外殼 | PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO263-3-2 | — |
| Gate Drive Level | Logic-level compatible | — |
| RoHS 狀態 | Compliant | — |
| Lead-Free | Yes | — |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at TC=25C | — | 214 W |
| On-State Resistance RDS(on) at VGS=10V (typ) | — | 3.9 mOhm |
| Gate-Source Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typ] |
| Gate-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd typ] |
| 封裝 | — | PG-TO263-7 (D2PAK-7, 6 leads + tab) |
| MSL 等級 | — | 1 |
| RoHS / Halogen-Free Status | — | RoHS compliant, halogen-free |
| Series / Family | — | OptiMOS 3 |