IPB110P06LMATMA1 vs IPB039N10N3GATMA1 Perbandingan
Perbandingan bersamaan detil IPB110P06LMATMA1 dari Infineon dan IPB039N10N3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPB039N10N3GATMA1 - 100V 160A OptiMOS 3 N-Channel MOSFET | Infineon
IPB039N10N3GATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IPB110P06LMATMA1 | IPB039N10N3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | P-Channel | N-Channel |
| Technology | OptiMOS (trench MOSFET) | MOSFET (Metal Oxide) |
| Drain-Source Voltage (VDS) | -60 V | — |
| Continuous Drain Current (ID) at TC=25C | -100 A | 160 A |
| Maximum Power Dissipation (PD) at TC=25C | 300 W | — |
| On-State Resistance (RDS(on) max) at VGS=10V | 11 mOhm @ ID=100A | — |
| Gate Threshold Voltage (VGS(th) max) | 2 V @ ID=5.55 mA | — |
| Gate-Source Voltage (VGS max) | +/-20 V | — |
| Rentang Suhu Kerja | -55 C to +175 C (TJ) | -55C to +175C |
| Paket / Case | PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO263-3-2 | — |
| Gate Drive Level | Logic-level compatible | — |
| Status RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at TC=25C | — | 214 W |
| On-State Resistance RDS(on) at VGS=10V (typ) | — | 3.9 mOhm |
| Gate-Source Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typ] |
| Gate-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd typ] |
| Paket | — | PG-TO263-7 (D2PAK-7, 6 leads + tab) |
| Level MSL | — | 1 |
| RoHS / Halogen-Free Status | — | RoHS compliant, halogen-free |
| Series / Family | — | OptiMOS 3 |