IPB110P06LMATMA1 vs IPB039N10N3GATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPB110P06LMATMA1 sa pamamagitan ng Infineon at IPB039N10N3GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPB110P06LMATMA1 IPB110P06LMATMA1 - P-Ch 60V 100A OptiMOS MOSFET | Infineon

IPB110P06LMATMA1 - P-Ch 60V 100A OptiMOS MOSFET | Infineon

IPB110P06LMATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPB110P06LMATMA1 IPB039N10N3GATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type P-Channel N-Channel
Technology OptiMOS (trench MOSFET) MOSFET (Metal Oxide)
Drain-Source Voltage (VDS) -60 V —
Continuous Drain Current (ID) at TC=25C -100 A 160 A
Maximum Power Dissipation (PD) at TC=25C 300 W —
On-State Resistance (RDS(on) max) at VGS=10V 11 mOhm @ ID=100A —
Gate Threshold Voltage (VGS(th) max) 2 V @ ID=5.55 mA —
Gate-Source Voltage (VGS max) +/-20 V —
Hanay ng Temperature na Operasyon -55 C to +175 C (TJ) -55C to +175C
Packhaging / Kaso PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) —
Uri ng Pagpapasok Surface Mount Surface Mount
Supplier Device Package PG-TO263-3-2 —
Gate Drive Level Logic-level compatible —
Tindminan RoHS Compliant —
Lead-Free Yes —
Drain-to-Source Voltage (VDS) — 100 V
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at TC=25C — 214 W
On-State Resistance RDS(on) at VGS=10V (typ) — 3.9 mOhm
Gate-Source Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typ]
Gate-Drain Charge (Qgd) — [DATA_NEEDED: Qgd typ]
Packhaging — PG-TO263-7 (D2PAK-7, 6 leads + tab)
Level ng MSL — 1
RoHS / Halogen-Free Status — RoHS compliant, halogen-free
Series / Family — OptiMOS 3

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