IPB120P04P4L03ATMA2 vs IPB200N25N3GATMA1 Comparison
Detailed side-by-side comparison of IPB120P04P4L03ATMA2 by Infineon and IPB200N25N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB120P04P4L03ATMA2 - 40V P-Channel MOSFET, 120A, D2PAK | Infineon
IPB120P04P4L03ATMA2 ✓ Active
Specification Comparison
| Parameter | IPB120P04P4L03ATMA2 | IPB200N25N3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Transistor Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tc=25C) | 120 A | — |
| Power Dissipation (PD, Tc=25C) | 136 W | — |
| On-Resistance (RDS(on)) | 3.1 mΩ (typ, per Infineon summary) | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/range] | — |
| Operating Junction Temperature | -55C to +175C | — |
| Package | PG-TO263-3-2 (D2PAK) | PG-TO263-3 (D2PAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology Family | OptiMOS-P2 | — |
| Configuration | Single P-Channel MOSFET | — |
| Pin Count | 3 (Gate, Drain, Source) | 3 (2+tab) |
| MSL Level | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant (per Infineon product page) | Compliant |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS 3 |
| Transistor Type | — | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | — | 250 V |
| Continuous Drain Current (I_D) at T_C | — | 64 A |
| Power Dissipation (P_D) at T_C | — | 300 W |
| R_DS(on) max at V_GS=10V | — | 20 mOhm |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical/max] |
| Technology | — | OptiMOS 3 (Trench) |
| Gate Charge (Q_g) | — | [DATA_NEEDED: Q_g typical] |
| Operating Temperature Range | — | -55C to +175C |
| Halogen Free | — | Yes (per Infineon OptiMOS family datasheet) |