IPB120P04P4L03ATMA2 vs IPB200N25N3GATMA1 Perbandingan
Perbandingan bersamaan detil IPB120P04P4L03ATMA2 dari Infineon dan IPB200N25N3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPB120P04P4L03ATMA2 - 40V P-Channel MOSFET, 120A, D2PAK | Infineon
IPB120P04P4L03ATMA2 ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | IPB120P04P4L03ATMA2 | IPB200N25N3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Transistor Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tc=25C) | 120 A | — |
| Power Dissipation (PD, Tc=25C) | 136 W | — |
| On-Resistance (RDS(on)) | 3.1 mΩ (typ, per Infineon summary) | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/range] | — |
| Suhu Hubung Kerja | -55C to +175C | — |
| Paket | PG-TO263-3-2 (D2PAK) | PG-TO263-3 (D2PAK) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology Family | OptiMOS-P2 | — |
| Configuration | Single P-Channel MOSFET | — |
| Jumlah Pin | 3 (Gate, Drain, Source) | 3 (2+tab) |
| Level MSL | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020) |
| Status RoHS | Compliant (per Infineon product page) | Compliant |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS 3 |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | — | 250 V |
| Continuous Drain Current (I_D) at T_C | — | 64 A |
| Power Dissipation (P_D) at T_C | — | 300 W |
| R_DS(on) max at V_GS=10V | — | 20 mOhm |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical/max] |
| Technology | — | OptiMOS 3 (Trench) |
| Gate Charge (Q_g) | — | [DATA_NEEDED: Q_g typical] |
| Rentang Suhu Kerja | — | -55C to +175C |
| Bebas Halogen | — | Yes (per Infineon OptiMOS family datasheet) |