IPB120P04P4L03ATMA2 vs IPB200N25N3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB120P04P4L03ATMA2 disebabkan oleh Infineon dan IPB200N25N3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB120P04P4L03ATMA2 IPB200N25N3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Transistor Polarity P-Channel —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID, Tc=25C) 120 A —
Power Dissipation (PD, Tc=25C) 136 W —
On-Resistance (RDS(on)) 3.1 mΩ (typ, per Infineon summary) —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/range] —
Suhu Hubungan Operasi -55C to +175C —
Kemasan PG-TO263-3-2 (D2PAK) PG-TO263-3 (D2PAK)
Jenis Pemasangan Surface Mount Surface Mount
Technology Family OptiMOS-P2 —
Configuration Single P-Channel MOSFET —
Kiraan Pin 3 (Gate, Drain, Source) 3 (2+tab)
Aras MSL [DATA_NEEDED: MSL level] 1 (per JEDEC J-STD-020)
Status RoHS Compliant (per Infineon product page) Compliant
Manufacturer — Infineon Technologies
Part Family — OptiMOS 3
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (V_DS) — 250 V
Continuous Drain Current (I_D) at T_C — 64 A
Power Dissipation (P_D) at T_C — 300 W
R_DS(on) max at V_GS=10V — 20 mOhm
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) typical/max]
Technology — OptiMOS 3 (Trench)
Gate Charge (Q_g) — [DATA_NEEDED: Q_g typical]
Gambaran Suhu Operasi — -55C to +175C
Boson Bebas — Yes (per Infineon OptiMOS family datasheet)

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