IPB60R280P7ATMA1 vs IAUA210N10S5N024AUMA1 Comparison

Detailed side-by-side comparison of IPB60R280P7ATMA1 by Infineon and IAUA210N10S5N024AUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPB60R280P7ATMA1 IAUA210N10S5N024AUMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Unit Price (USD) $0.88 —
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolMOS P7 (600 V) OptiMOS 5
Transistor Type N-Channel MOSFET —
Technology Superjunction (SJ) MOSFET (Metal Oxide), N-Channel
Drain-Source Voltage (V_DSS) 600 V —
Continuous Drain Current (I_D, T_C=25°C) 12 A —
On-Resistance R_DS(on) max (V_GS=10V) 280 mOhm —
Gate-Source Threshold V_GS(th) typ 3.5 V —
Power Dissipation P_D (T_C=25°C) 53 W —
Package PG-TO263-3 (D2PAK) PG-HSOF-5-4 (7×8 mm² sTOLL)
Mounting Type Surface Mount Surface Mount
Pin Count 3 (2 + Tab) —
Operating Temperature Range -55 °C to +150 °C (T_j max) -55°C to +175°C (TJ)
Configuration Single N-Channel —
RoHS Status Compliant Compliant
Lead-Free Yes Yes
Generation 7th Gen CoolMOS (successor to P6) —
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) @ Tj — 210 A
Continuous Drain Current (ID) @ TC=25°C — [DATA_NEEDED: ID at TC=25°C]
On-Resistance RDS(on) Max @ VGS=10V — 2.4 mΩ
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: typical VGS(th) value]
Gate Charge Qg (typ) — [DATA_NEEDED: Qg typ @ VGS=10V]
Power Dissipation (PD) @ TC=25°C — 238 W
Automotive Qualification — AEC-Q101
MSL Level — [DATA_NEEDED: MSL rating]
Avalanche Energy Rated — Yes (per datasheet)

Datasheets & Resources

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