IPB60R280P7ATMA1 vs IAUA210N10S5N024AUMA1 比較

詳細並排比較 IPB60R280P7ATMA1 由 Infineon 與 IAUA210N10S5N024AUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPB60R280P7ATMA1 IPB60R280P7ATMA1 - 600V 280mOhm CoolMOS P7 MOSFET | Infineon

IPB60R280P7ATMA1 - 600V 280mOhm CoolMOS P7 MOSFET | Infineon

IPB60R280P7ATMA1 ✓ 啟用中
Infineon
IAUA210N10S5N024AUMA1 IAUA210N10S5N024AUMA1 - 100V 2.4mΩ 210A OptiMOS 5 MOSFET | Infineon

IAUA210N10S5N024AUMA1 - 100V 2.4mΩ 210A OptiMOS 5 MOSFET | Infineon

IAUA210N10S5N024AUMA1 ✓ 啟用中

規格比較

參數 IPB60R280P7ATMA1 IAUA210N10S5N024AUMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
單價 (USD) $0.88 —
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolMOS P7 (600 V) OptiMOS 5
電晶體類型 N-Channel MOSFET —
Technology Superjunction (SJ) MOSFET (Metal Oxide), N-Channel
Drain-Source Voltage (V_DSS) 600 V —
Continuous Drain Current (I_D, T_C=25°C) 12 A —
On-Resistance R_DS(on) max (V_GS=10V) 280 mOhm —
Gate-Source Threshold V_GS(th) typ 3.5 V —
Power Dissipation P_D (T_C=25°C) 53 W —
封裝 PG-TO263-3 (D2PAK) PG-HSOF-5-4 (7×8 mm² sTOLL)
安裝類型 Surface Mount Surface Mount
腳位數 3 (2 + Tab) —
工作溫度範圍 -55 °C to +150 °C (T_j max) -55°C to +175°C (TJ)
Configuration Single N-Channel —
RoHS 狀態 Compliant Compliant
Lead-Free Yes Yes
Generation 7th Gen CoolMOS (successor to P6) —
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) @ Tj — 210 A
Continuous Drain Current (ID) @ TC=25°C — [DATA_NEEDED: ID at TC=25°C]
On-Resistance RDS(on) Max @ VGS=10V — 2.4 mΩ
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: typical VGS(th) value]
Gate Charge Qg (typ) — [DATA_NEEDED: Qg typ @ VGS=10V]
Power Dissipation (PD) @ TC=25°C — 238 W
Automotive Qualification — AEC-Q101
MSL 等級 — [DATA_NEEDED: MSL rating]
Avalanche Energy Rated — Yes (per datasheet)

資料表與資源

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