IPB60R280P7ATMA1 vs IAUA210N10S5N024AUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB60R280P7ATMA1 disebabkan oleh Infineon dan IAUA210N10S5N024AUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB60R280P7ATMA1 IAUA210N10S5N024AUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Harga Unit (USD) $0.88 —
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolMOS P7 (600 V) OptiMOS 5
Jenis Transistor N-Channel MOSFET —
Technology Superjunction (SJ) MOSFET (Metal Oxide), N-Channel
Drain-Source Voltage (V_DSS) 600 V —
Continuous Drain Current (I_D, T_C=25°C) 12 A —
On-Resistance R_DS(on) max (V_GS=10V) 280 mOhm —
Gate-Source Threshold V_GS(th) typ 3.5 V —
Power Dissipation P_D (T_C=25°C) 53 W —
Kemasan PG-TO263-3 (D2PAK) PG-HSOF-5-4 (7×8 mm² sTOLL)
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 3 (2 + Tab) —
Gambaran Suhu Operasi -55 °C to +150 °C (T_j max) -55°C to +175°C (TJ)
Configuration Single N-Channel —
Status RoHS Compliant Compliant
Lead-Free Yes Yes
Generation 7th Gen CoolMOS (successor to P6) —
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) @ Tj — 210 A
Continuous Drain Current (ID) @ TC=25°C — [DATA_NEEDED: ID at TC=25°C]
On-Resistance RDS(on) Max @ VGS=10V — 2.4 mΩ
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: typical VGS(th) value]
Gate Charge Qg (typ) — [DATA_NEEDED: Qg typ @ VGS=10V]
Power Dissipation (PD) @ TC=25°C — 238 W
Automotive Qualification — AEC-Q101
Aras MSL — [DATA_NEEDED: MSL rating]
Avalanche Energy Rated — Yes (per datasheet)

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga