IPB60R280P7ATMA1 vs IAUA210N10S5N024AUMA1 Perbandingan

Perbandingan bersamaan detil IPB60R280P7ATMA1 dari Infineon dan IAUA210N10S5N024AUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPB60R280P7ATMA1 IAUA210N10S5N024AUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Harga Unit (USD) $0,88 —
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolMOS P7 (600 V) OptiMOS 5
Tipe Transistor N-Channel MOSFET —
Technology Superjunction (SJ) MOSFET (Metal Oxide), N-Channel
Drain-Source Voltage (V_DSS) 600 V —
Continuous Drain Current (I_D, T_C=25°C) 12 A —
On-Resistance R_DS(on) max (V_GS=10V) 280 mOhm —
Gate-Source Threshold V_GS(th) typ 3.5 V —
Power Dissipation P_D (T_C=25°C) 53 W —
Paket PG-TO263-3 (D2PAK) PG-HSOF-5-4 (7×8 mm² sTOLL)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 (2 + Tab) —
Rentang Suhu Kerja -55 °C to +150 °C (T_j max) -55°C to +175°C (TJ)
Configuration Single N-Channel —
Status RoHS Compliant Compliant
Lead-Free Yes Yes
Generation 7th Gen CoolMOS (successor to P6) —
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) @ Tj — 210 A
Continuous Drain Current (ID) @ TC=25°C — [DATA_NEEDED: ID at TC=25°C]
On-Resistance RDS(on) Max @ VGS=10V — 2.4 mΩ
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: typical VGS(th) value]
Gate Charge Qg (typ) — [DATA_NEEDED: Qg typ @ VGS=10V]
Power Dissipation (PD) @ TC=25°C — 238 W
Automotive Qualification — AEC-Q101
Level MSL — [DATA_NEEDED: MSL rating]
Avalanche Energy Rated — Yes (per datasheet)

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IAUA210N10S5N024AUMA1

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