IPC100N04S5L1R1ATMA1 vs IPC100N04S51R7ATMA1 比較

詳細並排比較 IPC100N04S5L1R1ATMA1 由 Infineon 與 IPC100N04S51R7ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPC100N04S5L1R1ATMA1 IPC100N04S5L1R1ATMA1 - 40V 100A OptiMOS-5 N-Channel MOSFET | Infineon

IPC100N04S5L1R1ATMA1 - 40V 100A OptiMOS-5 N-Channel MOSFET | Infineon

IPC100N04S5L1R1ATMA1 ✓ 啟用中
Infineon
IPC100N04S51R7ATMA1 IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon

IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon

IPC100N04S51R7ATMA1 ✓ 啟用中

規格比較

參數 IPC100N04S5L1R1ATMA1 IPC100N04S51R7ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-5 40 V —
電晶體類型 N-Channel Enhancement Mode N-Channel MOSFET, Enhancement Mode
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at TC 100 A —
On-Resistance RDS(on) max 1.1 mΩ —
Power Dissipation (PD) at TC 150 W —
Gate Threshold Voltage VGS(th) Logic Level [DATA_NEEDED: VGS(th) value]
工作溫度範圍 -55 °C to +175 °C —
封裝 PG-TDSON-8-34 (SS08 leadless) PG-TDSON-8-34 (SS08 leadless)
安裝類型 Surface Mount Surface Mount
MSL 等級 MSL1 (unlimited floor life, 260 °C peak reflow) MSL1 (260 °C peak reflow)
Automotive Qualification AEC-Q101 qualified —
Avalanche Tested 100% avalanche tested 100% tested
RoHS Compliance Green Product (RoHS compliant) —
Series — OptiMOS-5
Drain-Source Voltage VDS — 40 V
Continuous Drain Current ID — 100 A (at TC)
Pulsed Drain Current IDM — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage VGS — [DATA_NEEDED: VGS max rating]
On-Resistance RDS(on) — [DATA_NEEDED: RDS(on) at VGS=10V]
Total Gate Charge Qg — [DATA_NEEDED: total gate charge]
Power Dissipation PD — 115 W (at TC)
Thermal Resistance RthJC — 1.3 K/W
工作接面溫度 — -55 °C to +175 °C
AEC-Q101 Qualified — Yes
RoHS 狀態 — Compliant (Green Product)
Built-in Body Diode — Yes

資料表與資源

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