IPC100N04S5L1R1ATMA1 vs IPC100N04S51R7ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPC100N04S5L1R1ATMA1 sa pamamagitan ng Infineon at IPC100N04S51R7ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPC100N04S5L1R1ATMA1 IPC100N04S5L1R1ATMA1 - 40V 100A OptiMOS-5 N-Channel MOSFET | Infineon

IPC100N04S5L1R1ATMA1 - 40V 100A OptiMOS-5 N-Channel MOSFET | Infineon

IPC100N04S5L1R1ATMA1 ✓ Nakahanda
Infineon
IPC100N04S51R7ATMA1 IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon

IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon

IPC100N04S51R7ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPC100N04S5L1R1ATMA1 IPC100N04S51R7ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-5 40 V —
Uri ng Transistor N-Channel Enhancement Mode N-Channel MOSFET, Enhancement Mode
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at TC 100 A —
On-Resistance RDS(on) max 1.1 mΩ —
Power Dissipation (PD) at TC 150 W —
Gate Threshold Voltage VGS(th) Logic Level [DATA_NEEDED: VGS(th) value]
Hanay ng Temperature na Operasyon -55 °C to +175 °C —
Packhaging PG-TDSON-8-34 (SS08 leadless) PG-TDSON-8-34 (SS08 leadless)
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL MSL1 (unlimited floor life, 260 °C peak reflow) MSL1 (260 °C peak reflow)
Automotive Qualification AEC-Q101 qualified —
Avalanche Tested 100% avalanche tested 100% tested
RoHS Compliance Green Product (RoHS compliant) —
Series — OptiMOS-5
Drain-Source Voltage VDS — 40 V
Continuous Drain Current ID — 100 A (at TC)
Pulsed Drain Current IDM — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage VGS — [DATA_NEEDED: VGS max rating]
On-Resistance RDS(on) — [DATA_NEEDED: RDS(on) at VGS=10V]
Total Gate Charge Qg — [DATA_NEEDED: total gate charge]
Power Dissipation PD — 115 W (at TC)
Thermal Resistance RthJC — 1.3 K/W
Temperature ng Junction na Operasyon — -55 °C to +175 °C
AEC-Q101 Qualified — Yes
Tindminan RoHS — Compliant (Green Product)
Built-in Body Diode — Yes

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