IPC100N04S5L1R1ATMA1 vs IPC100N04S51R7ATMA1 Perbandingan

Perbandingan bersamaan detil IPC100N04S5L1R1ATMA1 dari Infineon dan IPC100N04S51R7ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPC100N04S51R7ATMA1 IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon

IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon

IPC100N04S51R7ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPC100N04S5L1R1ATMA1 IPC100N04S51R7ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-5 40 V —
Tipe Transistor N-Channel Enhancement Mode N-Channel MOSFET, Enhancement Mode
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at TC 100 A —
On-Resistance RDS(on) max 1.1 mΩ —
Power Dissipation (PD) at TC 150 W —
Gate Threshold Voltage VGS(th) Logic Level [DATA_NEEDED: VGS(th) value]
Rentang Suhu Kerja -55 °C to +175 °C —
Paket PG-TDSON-8-34 (SS08 leadless) PG-TDSON-8-34 (SS08 leadless)
Tipe Mounting Surface Mount Surface Mount
Level MSL MSL1 (unlimited floor life, 260 °C peak reflow) MSL1 (260 °C peak reflow)
Automotive Qualification AEC-Q101 qualified —
Avalanche Tested 100% avalanche tested 100% tested
RoHS Compliance Green Product (RoHS compliant) —
Series — OptiMOS-5
Drain-Source Voltage VDS — 40 V
Continuous Drain Current ID — 100 A (at TC)
Pulsed Drain Current IDM — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage VGS — [DATA_NEEDED: VGS max rating]
On-Resistance RDS(on) — [DATA_NEEDED: RDS(on) at VGS=10V]
Total Gate Charge Qg — [DATA_NEEDED: total gate charge]
Power Dissipation PD — 115 W (at TC)
Thermal Resistance RthJC — 1.3 K/W
Suhu Hubung Kerja — -55 °C to +175 °C
AEC-Q101 Qualified — Yes
Status RoHS — Compliant (Green Product)
Built-in Body Diode — Yes

Spek dan Sumber

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