IPD028N06NF2SATMA1 vs IPC50N04S5L5R5ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD028N06NF2SATMA1 disebabkan oleh Infineon dan IPC50N04S5L5R5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IPD028N06NF2SATMA1 - 60V 139A 2.85mΩ OptiMOS N-MOSFET | Infineon
IPD028N06NF2SATMA1 ✓ AktifInfineon
IPC50N04S5L5R5ATMA1 - 40V 50A 5.5mΩ OptiMOS Auto MOSFET | Infineon
IPC50N04S5L5R5ATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IPD028N06NF2SATMA1 | IPC50N04S5L5R5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPD028N06NF2SATMA1 | — |
| Jenis Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Technology Family | OptiMOS 5 60V | — |
| Drain-Source Voltage (VDS) max | 60 V | — |
| Continuous Drain Current (ID) at TA=25°C | 24 A | — |
| Continuous Drain Current (ID) at TC=25°C | 139 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) typ @ VGS=10V | 2.85 mΩ | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage (VGS(th)) typ | [DATA_NEEDED: VGS(th) typ] | — |
| Power Dissipation at TA=25°C | 3 W | — |
| Power Dissipation at TC=25°C | 150 W | — |
| Gambaran Suhu Hubungan Operasi | -55 C to +175 C | — |
| Kemasan | PG-TO252-3 (DPAK) | PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kiraan Pin | 3 (Gate, Drain-tab, Source) | — |
| Status RoHS | Compliant | — |
| Aras MSL | 1 (per JEDEC J-STD-020) | — |
| Packing | Tape & Reel (T&R) | — |
| Mode | — | Enhancement Mode |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tc) | — | 50 A |
| Maximum Drain Current (silicon-limited, 25 °C) | — | 60 A |
| On-Resistance RDS(on) max @ VGS=10 V | — | 5.5 mΩ |
| Gate Threshold VGS(th) | — | Logic Level (enhancement at ≤ 4.5 V VGS) |
| Power Dissipation (Tc) | — | 42 W |
| Thermal Resistance Junction-to-Case RthJC | — | 3.6 K/W |
| Gambaran Suhu Operasi | — | -55 °C to +175 °C |
| AEC-Q101 Qualification | — | Qualified (automotive grade) |
| MSL (Moisture Sensitivity Level) | — | MSL1 |
| Peak Reflow Temperature | — | 260 °C |
| Avalanche Rating | — | 100 % Avalanche Tested |
| RoHS / REACH | — | RoHS Compliant (Green Product) |