IPD028N06NF2SATMA1 vs IPC50N04S5L5R5ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD028N06NF2SATMA1 sa pamamagitan ng Infineon at IPC50N04S5L5R5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD028N06NF2SATMA1 - 60V 139A 2.85mΩ OptiMOS N-MOSFET | Infineon
IPD028N06NF2SATMA1 ✓ NakahandaInfineon
IPC50N04S5L5R5ATMA1 - 40V 50A 5.5mΩ OptiMOS Auto MOSFET | Infineon
IPC50N04S5L5R5ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPD028N06NF2SATMA1 | IPC50N04S5L5R5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPD028N06NF2SATMA1 | — |
| Uri ng Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Technology Family | OptiMOS 5 60V | — |
| Drain-Source Voltage (VDS) max | 60 V | — |
| Continuous Drain Current (ID) at TA=25°C | 24 A | — |
| Continuous Drain Current (ID) at TC=25°C | 139 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) typ @ VGS=10V | 2.85 mΩ | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage (VGS(th)) typ | [DATA_NEEDED: VGS(th) typ] | — |
| Power Dissipation at TA=25°C | 3 W | — |
| Power Dissipation at TC=25°C | 150 W | — |
| Hanay ng Temperature ng Junction na Operasyon | -55 C to +175 C | — |
| Packhaging | PG-TO252-3 (DPAK) | PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pin | 3 (Gate, Drain-tab, Source) | — |
| Tindminan RoHS | Compliant | — |
| Level ng MSL | 1 (per JEDEC J-STD-020) | — |
| Packing | Tape & Reel (T&R) | — |
| Mode | — | Enhancement Mode |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tc) | — | 50 A |
| Maximum Drain Current (silicon-limited, 25 °C) | — | 60 A |
| On-Resistance RDS(on) max @ VGS=10 V | — | 5.5 mΩ |
| Gate Threshold VGS(th) | — | Logic Level (enhancement at ≤ 4.5 V VGS) |
| Power Dissipation (Tc) | — | 42 W |
| Thermal Resistance Junction-to-Case RthJC | — | 3.6 K/W |
| Hanay ng Temperature na Operasyon | — | -55 °C to +175 °C |
| AEC-Q101 Qualification | — | Qualified (automotive grade) |
| MSL (Moisture Sensitivity Level) | — | MSL1 |
| Peak Reflow Temperature | — | 260 °C |
| Avalanche Rating | — | 100 % Avalanche Tested |
| RoHS / REACH | — | RoHS Compliant (Green Product) |