IPD22N08S2L50ATMA1 vs IPD50N06S409ATMA2 Comparison

Detailed side-by-side comparison of IPD22N08S2L50ATMA1 by Infineon and IPD50N06S409ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD22N08S2L50ATMA1 IPD22N08S2L50ATMA1 - 75V 27A OptiMOS N-Channel MOSFET | Infineon

IPD22N08S2L50ATMA1 - 75V 27A OptiMOS N-Channel MOSFET | Infineon

IPD22N08S2L50ATMA1 βœ“ Active

Specification Comparison

Parameter IPD22N08S2L50ATMA1 IPD50N06S409ATMA2
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.39 $0.49
Manufacturer Infineon Technologies β€”
Part Family OptiMOS β€”
Transistor Type N-Channel MOSFET (Enhancement Mode) β€”
Drain-Source Voltage (VDS) 75 V 60 V
Continuous Drain Current (ID, Tc) 27 A β€”
Maximum Power Dissipation (Ptot) 75 W β€”
On-Resistance RDS(on) max @ VGS=10V 23 mOhm (typical) β€”
On-Resistance RDS(on) [DATA_NEEDED: RDS(on) max at VGS=10V and VGS=4.5V] β€”
Gate Threshold Voltage (VGS(th)) Logic-Level (typ. 1.7-2.5 V) [DATA_NEEDED: VGS(th) typical]
Avalanche Energy Rating 100% Avalanche Tested β€”
Operating Junction Temperature -55 C to +175 C -55 Β°C to +175 Β°C
Package PG-TO252-3-11 (DPAK) PG-TO252-3-11 (DPAK)
Mounting Type Surface Mount Surface Mount
MSL Level MSL1 (per JEDEC J-STD-020, up to 260 C peak reflow) β€”
Automotive Qualification AEC-Q101 Qualified AEC-Q101
Lead-Free / RoHS Yes (Green Package) β€”
Technology β€” N-Channel MOSFET (OptiMOS)
Continuous Drain Current (ID) at Tc β€” 50 A
On-Resistance R<sub>DS(on)</sub> max at VGS=10V β€” 9 mΞ©
Gate-Source Voltage (VGS) max β€” [DATA_NEEDED: VGS max rating]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg typical]
Power Dissipation (Pd) at Tc β€” 71 W
Pin Count β€” 3 (2 + Tab)
RoHS Status β€” Compliant
Lead-Free / Halogen-Free β€” [DATA_NEEDED]

Datasheets & Resources

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