IPD30N08S2L21ATMA1 vs IPB180P04P4L02ATMA2 Perbandingan

Perbandingan bersamaan detil IPD30N08S2L21ATMA1 dari Infineon dan IPB180P04P4L02ATMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPD30N08S2L21ATMA1 IPB180P04P4L02ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS OptiMOS-P2
Tipe Transistor N-Channel MOSFET P-Channel MOSFET
Drain-Source Voltage (VDS) 75 V 40 V
Continuous Drain Current (ID) at Tc=25C 30 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-State Resistance (RDS(on)) at VGS=10 V 26 milliohm (typ) —
Gate Threshold Voltage (VGS(th)) Logic-level (L series) —
Gate Charge (Qg) typ 56 nC —
Power Dissipation (PD) at Tc=25C 136 W —
Rentang Suhu Kerja -55C to +175C -55 C to +175 C (junction)
Maximum Junction Temperature +175C —
Paket PG-TO252-3-11 (DPAK-2) PG-TO263-7-3 (D2PAK-6, 7-pin)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 (Drain tab + Gate + Source) 7 (6 + tab)
Automotive Qualification AEC-Q101 qualified AEC-Q101
Status RoHS Compliant Compliant (per Infineon product page)
Level MSL 1 [DATA_NEEDED: MSL rating]
Continuous Drain Current (ID) at Tc — 180 A
Power Dissipation (PD) at Tc — 150 W
On-State Resistance RDS(on) max — 2.4 mOhm at VGS = -10 V (per Infineon product page)
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typ/min/max]
Tab Connection — Drain

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