IPD30N08S2L21ATMA1 vs IPB180P04P4L02ATMA2 比較
詳細並排比較 IPD30N08S2L21ATMA1 由 Infineon 與 IPB180P04P4L02ATMA2 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IPB180P04P4L02ATMA2 - 40V P-Channel 180A OptiMOS-P2 MOSFET | Infineon
IPB180P04P4L02ATMA2 ✓ 啟用中規格比較
| 參數 | IPD30N08S2L21ATMA1 | IPB180P04P4L02ATMA2 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | OptiMOS-P2 |
| 電晶體類型 | N-Channel MOSFET | P-Channel MOSFET |
| Drain-Source Voltage (VDS) | 75 V | 40 V |
| Continuous Drain Current (ID) at Tc=25C | 30 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-State Resistance (RDS(on)) at VGS=10 V | 26 milliohm (typ) | — |
| Gate Threshold Voltage (VGS(th)) | Logic-level (L series) | — |
| Gate Charge (Qg) typ | 56 nC | — |
| Power Dissipation (PD) at Tc=25C | 136 W | — |
| 工作溫度範圍 | -55C to +175C | -55 C to +175 C (junction) |
| Maximum Junction Temperature | +175C | — |
| 封裝 | PG-TO252-3-11 (DPAK-2) | PG-TO263-7-3 (D2PAK-6, 7-pin) |
| 安裝類型 | Surface Mount | Surface Mount |
| 腳位數 | 3 (Drain tab + Gate + Source) | 7 (6 + tab) |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| RoHS 狀態 | Compliant | Compliant (per Infineon product page) |
| MSL 等級 | 1 | [DATA_NEEDED: MSL rating] |
| Continuous Drain Current (ID) at Tc | — | 180 A |
| Power Dissipation (PD) at Tc | — | 150 W |
| On-State Resistance RDS(on) max | — | 2.4 mOhm at VGS = -10 V (per Infineon product page) |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Tab Connection | — | Drain |