IPD30N08S2L21ATMA1 vs IPB180P04P4L02ATMA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD30N08S2L21ATMA1 disebabkan oleh Infineon dan IPB180P04P4L02ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD30N08S2L21ATMA1 IPB180P04P4L02ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS OptiMOS-P2
Jenis Transistor N-Channel MOSFET P-Channel MOSFET
Drain-Source Voltage (VDS) 75 V 40 V
Continuous Drain Current (ID) at Tc=25C 30 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-State Resistance (RDS(on)) at VGS=10 V 26 milliohm (typ) —
Gate Threshold Voltage (VGS(th)) Logic-level (L series) —
Gate Charge (Qg) typ 56 nC —
Power Dissipation (PD) at Tc=25C 136 W —
Gambaran Suhu Operasi -55C to +175C -55 C to +175 C (junction)
Maximum Junction Temperature +175C —
Kemasan PG-TO252-3-11 (DPAK-2) PG-TO263-7-3 (D2PAK-6, 7-pin)
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 3 (Drain tab + Gate + Source) 7 (6 + tab)
Automotive Qualification AEC-Q101 qualified AEC-Q101
Status RoHS Compliant Compliant (per Infineon product page)
Aras MSL 1 [DATA_NEEDED: MSL rating]
Continuous Drain Current (ID) at Tc — 180 A
Power Dissipation (PD) at Tc — 150 W
On-State Resistance RDS(on) max — 2.4 mOhm at VGS = -10 V (per Infineon product page)
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typ/min/max]
Tab Connection — Drain

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