IPD5N25S3430ATMA1 vs BSC155N06NDATMA1 Comparison
Detailed side-by-side comparison of IPD5N25S3430ATMA1 by Infineon and BSC155N06NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPD5N25S3430ATMA1 | BSC155N06NDATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Transistor Type | N-Channel MOSFET | — |
| Technology | OptiMOS (planar-trench) | OptiMOS 3 (N-channel trench) |
| Drain-Source Voltage (VDS) | 250 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 5 A | — |
| Pulsed Drain Current (IDM) | 20 A | [DATA_NEEDED: pulsed drain current] |
| RDS(on) max @ VGS=10V | 430 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | 3 V typ / 4 V max | — |
| Input Capacitance (Ciss) | 422 pF typical | — |
| Power Dissipation (PD, Tc=25°C) | 41 W | — |
| Operating Junction Temperature | -55 °C to +175 °C | — |
| Package | PG-TO252-3-313 (DPAK, surface mount) | PG-TDSON-8-4 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | — |
| RoHS Status | ROHS3 Compliant | Compliant (Pb-free plating) |
| Lead Finish | Matte Tin (lead-free) | — |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 |
| Configuration | Single, 3-pin (2+Tab) | Dual N-channel MOSFET array |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSC155N06NDATMA1 |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Tc=25C | — | 20 A |
| On-State Resistance RDS(on) max at VGS=10V | — | 15.5 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Operating Temperature Range | — | -55 C to +175 C |
| Power Dissipation (Tc=25C) | — | 50 W |
| Lead-Free Plating | — | Yes |
| Shoot-Through Immunity Qgd/Qgs | — | < 0.8 |