IPD5N25S3430ATMA1 vs BSC155N06NDATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD5N25S3430ATMA1 disebabkan oleh Infineon dan BSC155N06NDATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD5N25S3430ATMA1 BSC155N06NDATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel MOSFET —
Technology OptiMOS (planar-trench) OptiMOS 3 (N-channel trench)
Drain-Source Voltage (VDS) 250 V —
Continuous Drain Current (ID, Tc=25°C) 5 A —
Pulsed Drain Current (IDM) 20 A [DATA_NEEDED: pulsed drain current]
RDS(on) max @ VGS=10V 430 mΩ —
Gate-Source Threshold Voltage (VGS(th)) 3 V typ / 4 V max —
Input Capacitance (Ciss) 422 pF typical —
Power Dissipation (PD, Tc=25°C) 41 W —
Suhu Hubungan Operasi -55 °C to +175 °C —
Kemasan PG-TO252-3-313 (DPAK, surface mount) PG-TDSON-8-4 (SuperSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualification AEC-Q101 —
Status RoHS ROHS3 Compliant Compliant (Pb-free plating)
Lead Finish Matte Tin (lead-free) —
Aras MSL 1 (per JEDEC J-STD-020) 1
Configuration Single, 3-pin (2+Tab) Dual N-channel MOSFET array
Manufacturer — Infineon Technologies
Part Number — BSC155N06NDATMA1
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at Tc=25C — 20 A
On-State Resistance RDS(on) max at VGS=10V — 15.5 mOhm
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Gambaran Suhu Operasi — -55 C to +175 C
Power Dissipation (Tc=25C) — 50 W
Lead-Free Plating — Yes
Shoot-Through Immunity Qgd/Qgs — < 0.8

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