IPD5N25S3430ATMA1 vs BSC155N06NDATMA1 Perbandingan
Perbandingan bersamaan detil IPD5N25S3430ATMA1 dari Infineon dan BSC155N06NDATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPD5N25S3430ATMA1 | BSC155N06NDATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Transistor | N-Channel MOSFET | — |
| Technology | OptiMOS (planar-trench) | OptiMOS 3 (N-channel trench) |
| Drain-Source Voltage (VDS) | 250 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 5 A | — |
| Pulsed Drain Current (IDM) | 20 A | [DATA_NEEDED: pulsed drain current] |
| RDS(on) max @ VGS=10V | 430 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | 3 V typ / 4 V max | — |
| Input Capacitance (Ciss) | 422 pF typical | — |
| Power Dissipation (PD, Tc=25°C) | 41 W | — |
| Suhu Hubung Kerja | -55 °C to +175 °C | — |
| Paket | PG-TO252-3-313 (DPAK, surface mount) | PG-TDSON-8-4 (SuperSO8 5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | — |
| Status RoHS | ROHS3 Compliant | Compliant (Pb-free plating) |
| Lead Finish | Matte Tin (lead-free) | — |
| Level MSL | 1 (per JEDEC J-STD-020) | 1 |
| Configuration | Single, 3-pin (2+Tab) | Dual N-channel MOSFET array |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSC155N06NDATMA1 |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Tc=25C | — | 20 A |
| On-State Resistance RDS(on) max at VGS=10V | — | 15.5 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Rentang Suhu Kerja | — | -55 C to +175 C |
| Power Dissipation (Tc=25C) | — | 50 W |
| Lead-Free Plating | — | Yes |
| Shoot-Through Immunity Qgd/Qgs | — | < 0.8 |