IPG16N10S461AATMA1 vs IPG16N10S4L61AATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPG16N10S461AATMA1 disebabkan oleh Infineon dan IPG16N10S4L61AATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPG16N10S461AATMA1 IPG16N10S4L61AATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Type Dual N-Channel MOSFET Array —
Technology OptiMOS™ trench Logic-Level, Enhancement Mode
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) 16 A —
On-Resistance R_DS(on) typ. 61 mΩ —
Total Power Dissipation (Ptot) 29 W (T_C = 25°C) —
Configuration 2 N-Channel (Dual, separate) —
Gate Threshold Voltage V_GS(th) typ. [DATA_NEEDED: gate threshold voltage] —
Maximum Junction Temperature 175 °C —
Gambaran Suhu Operasi -55 °C to +175 °C —
Kemasan PG-TDSON-8-10 (Wettable Flank) —
Jenis Pemasangan Surface Mount Surface Mount
Terminal Count 8 —
Aras MSL [DATA_NEEDED: MSL rating] —
Status RoHS Compliant —
Built-in Body Diode Yes —
Channel Mode Enhancement —
FET Type — Dual N-Channel (Array)
Continuous Drain Current (ID) at 25C — 16 A
Power Dissipation (PD) — 29 W
Kemasan / Case — PG-TDSON-8-10 (Wettable Flank)
Suhu Operasi — -55C to +175C (TJ)
Tingkat sensitiviti Air Nama (MSL) — MSL1 (unlimited floor life at <30C / 85% RH)
Peak Reflow Temperature — 260 C
AEC-Q101 Qualification — Qualified (automotive grade)
RoHS Compliance — Compliant (Green Product)
Avalanche Tested — 100% (per datasheet)
AOI Compatible — Yes (Wettable Flank)
FET Feature — Logic Level Gate

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