IPG16N10S461AATMA1 vs IPG16N10S4L61AATMA1 Perbandingan

Perbandingan bersamaan detil IPG16N10S461AATMA1 dari Infineon dan IPG16N10S4L61AATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPG16N10S461AATMA1 IPG16N10S4L61AATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Type Dual N-Channel MOSFET Array —
Technology OptiMOS™ trench Logic-Level, Enhancement Mode
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) 16 A —
On-Resistance R_DS(on) typ. 61 mΩ —
Total Power Dissipation (Ptot) 29 W (T_C = 25°C) —
Configuration 2 N-Channel (Dual, separate) —
Gate Threshold Voltage V_GS(th) typ. [DATA_NEEDED: gate threshold voltage] —
Maximum Junction Temperature 175 °C —
Rentang Suhu Kerja -55 °C to +175 °C —
Paket PG-TDSON-8-10 (Wettable Flank) —
Tipe Mounting Surface Mount Surface Mount
Terminal Count 8 —
Level MSL [DATA_NEEDED: MSL rating] —
Status RoHS Compliant —
Built-in Body Diode Yes —
Channel Mode Enhancement —
FET Type — Dual N-Channel (Array)
Continuous Drain Current (ID) at 25C — 16 A
Power Dissipation (PD) — 29 W
Paket / Case — PG-TDSON-8-10 (Wettable Flank)
Suhu Kerja — -55C to +175C (TJ)
Tingkat Sensitivitas Kekeringan (MSL) — MSL1 (unlimited floor life at <30C / 85% RH)
Peak Reflow Temperature — 260 C
AEC-Q101 Qualification — Qualified (automotive grade)
RoHS Compliance — Compliant (Green Product)
Avalanche Tested — 100% (per datasheet)
AOI Compatible — Yes (Wettable Flank)
FET Feature — Logic Level Gate

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