IPG16N10S461AATMA1 vs IPG20N06S4L14AATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPG16N10S461AATMA1 disebabkan oleh Infineon dan IPG20N06S4L14AATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPG20N06S4L14AATMA1 IPG20N06S4L14AATMA1 - 60V Dual N-Ch 14mΩ MOSFET | Infineon

IPG20N06S4L14AATMA1 - 60V Dual N-Ch 14mΩ MOSFET | Infineon

IPG20N06S4L14AATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPG16N10S461AATMA1 IPG20N06S4L14AATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Type Dual N-Channel MOSFET Array —
Technology OptiMOS™ trench OptiMOS™ Trench
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) 16 A 20 A (per channel)
On-Resistance R_DS(on) typ. 61 mΩ —
Total Power Dissipation (Ptot) 29 W (T_C = 25°C) —
Configuration 2 N-Channel (Dual, separate) —
Gate Threshold Voltage V_GS(th) typ. [DATA_NEEDED: gate threshold voltage] —
Maximum Junction Temperature 175 °C —
Gambaran Suhu Operasi -55 °C to +175 °C -55°C to +175°C (junction)
Kemasan PG-TDSON-8-10 (Wettable Flank) PG-TDSON-8-10 (Wettable Flank)
Jenis Pemasangan Surface Mount Surface Mount
Terminal Count 8 —
Aras MSL [DATA_NEEDED: MSL rating] —
Status RoHS Compliant —
Built-in Body Diode Yes —
Channel Mode Enhancement —
Part Number — IPG20N06S4L14AATMA1
FET Type — 2 N-Channel (Dual)
Drain-to-Source Voltage (VDS) — 60 V
Power Dissipation (PD) — 50 W
RDS(on) at VGS=10V — 13.7 mΩ typical
RDS(on) at VGS=4.5V — 14 mΩ typical
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th)]
Logic-Level Gate Drive — Yes
Automotive Qualification — AEC-Q101
Peak Reflow Temperature — 260°C
Avalanche Tested — 100% (per datasheet)
RoHS Compliance — Green Product (RoHS compliant)
AOI Compatible — Yes (Wettable Flank)

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