IPG16N10S461AATMA1 vs IPG20N06S4L14AATMA1 Perbandingan
Perbandingan bersamaan detil IPG16N10S461AATMA1 dari Infineon dan IPG20N06S4L14AATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPG16N10S461AATMA1 | IPG20N06S4L14AATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Type | Dual N-Channel MOSFET Array | — |
| Technology | OptiMOS™ trench | OptiMOS™ Trench |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) | 16 A | 20 A (per channel) |
| On-Resistance R_DS(on) typ. | 61 mΩ | — |
| Total Power Dissipation (Ptot) | 29 W (T_C = 25°C) | — |
| Configuration | 2 N-Channel (Dual, separate) | — |
| Gate Threshold Voltage V_GS(th) typ. | [DATA_NEEDED: gate threshold voltage] | — |
| Maximum Junction Temperature | 175 °C | — |
| Rentang Suhu Kerja | -55 °C to +175 °C | -55°C to +175°C (junction) |
| Paket | PG-TDSON-8-10 (Wettable Flank) | PG-TDSON-8-10 (Wettable Flank) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Terminal Count | 8 | — |
| Level MSL | [DATA_NEEDED: MSL rating] | — |
| Status RoHS | Compliant | — |
| Built-in Body Diode | Yes | — |
| Channel Mode | Enhancement | — |
| Part Number | — | IPG20N06S4L14AATMA1 |
| FET Type | — | 2 N-Channel (Dual) |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Power Dissipation (PD) | — | 50 W |
| RDS(on) at VGS=10V | — | 13.7 mΩ typical |
| RDS(on) at VGS=4.5V | — | 14 mΩ typical |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th)] |
| Logic-Level Gate Drive | — | Yes |
| Automotive Qualification | — | AEC-Q101 |
| Peak Reflow Temperature | — | 260°C |
| Avalanche Tested | — | 100% (per datasheet) |
| RoHS Compliance | — | Green Product (RoHS compliant) |
| AOI Compatible | — | Yes (Wettable Flank) |