IPG16N10S461AATMA1 vs IPG20N06S4L14AATMA1 مقایسه
مقایسه دقیق کنار به کنار IPG16N10S461AATMA1 توسط Infineon و IPG20N06S4L14AATMA1 توسط Infineon. مشخصات کلیدی، پارامترهای الکتریکی، بسته‌بندی، وضعیت چرخه عمر، قیمت‌گذاری و موجودی را مقایسه کنید تا بهترین قطعه را برای نیازهای طراحی خود تعیین کنید.
مقایسه مشخصات
| پارامتر | IPG16N10S461AATMA1 | IPG20N06S4L14AATMA1 |
|---|---|---|
| برند | Infineon | Infineon |
| دسته‌بندی | MOSFETs | MOSFETs |
| وضعیت چرخه عمر | فعال | فعال |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Type | Dual N-Channel MOSFET Array | — |
| Technology | OptiMOS™ trench | OptiMOS™ Trench |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) | 16 A | 20 A (per channel) |
| On-Resistance R_DS(on) typ. | 61 mΩ | — |
| Total Power Dissipation (Ptot) | 29 W (T_C = 25°C) | — |
| Configuration | 2 N-Channel (Dual, separate) | — |
| Gate Threshold Voltage V_GS(th) typ. | [DATA_NEEDED: gate threshold voltage] | — |
| Maximum Junction Temperature | 175 °C | — |
| محدوده دمای کاری | -55 °C to +175 °C | -55°C to +175°C (junction) |
| بسته‌بندی | PG-TDSON-8-10 (Wettable Flank) | PG-TDSON-8-10 (Wettable Flank) |
| نوع نصب | Surface Mount | Surface Mount |
| Terminal Count | 8 | — |
| سطح MSL | [DATA_NEEDED: MSL rating] | — |
| وضعیت RoHS | Compliant | — |
| Built-in Body Diode | Yes | — |
| Channel Mode | Enhancement | — |
| Part Number | — | IPG20N06S4L14AATMA1 |
| FET Type | — | 2 N-Channel (Dual) |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Power Dissipation (PD) | — | 50 W |
| RDS(on) at VGS=10V | — | 13.7 mΩ typical |
| RDS(on) at VGS=4.5V | — | 14 mΩ typical |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th)] |
| Logic-Level Gate Drive | — | Yes |
| Automotive Qualification | — | AEC-Q101 |
| Peak Reflow Temperature | — | 260°C |
| Avalanche Tested | — | 100% (per datasheet) |
| RoHS Compliance | — | Green Product (RoHS compliant) |
| AOI Compatible | — | Yes (Wettable Flank) |