IPG20N04S4L07ATMA1 vs IPD50N04S408ATMA1 Perbandingan

Perbandingan bersamaan detil IPG20N04S4L07ATMA1 dari Infineon dan IPD50N04S408ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPG20N04S4L07ATMA1 IPD50N04S408ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS™ T2 —
FET Type 2x N-Channel (Dual, Independent) —
Drain-to-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) 20 A —
RDS(on) Max @ VGS=10V 7.2 mΩ (typical) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
Gate Charge (Qg) [DATA_NEEDED: total gate charge at VGS=10V] —
Power Dissipation (PD) Max 65 W —
Suhu Hubung Kerja -55°C to +175°C —
Paket PG-TDSON-8-4 (TDSON-8-4) PG-TO252-3-313 (DPAK)
Tipe Mounting Surface Mount Surface Mount
Logic-Level Gate Drive Yes (4.5V VGS fully enhanced) —
Level MSL MSL1 (per JEDEC J-STD-020, 260°C peak reflow) MSL1 (260 °C peak reflow)
AEC-Q101 Qualification Qualified —
Avalanche Tested 100% (per datasheet) 100 % Avalanche tested
RoHS / Lead-Free RoHS compliant, lead-free terminations —
Product Family — OptiMOS-T2
Polarity — N-Channel
Mode — Enhancement-mode
Drain-Source Voltage (V DS) — 40 V
Continuous Drain Current (I D, Tc) — 50 A
Power Dissipation (P D, Tc) — 46 W
Rentang Suhu Kerja — -55 °C to +175 °C
Automotive Qualification — AEC-Q101
Green Package (RoHS) — RoHS compliant
Gate Threshold Voltage (V GS(th)) — [DATA_NEEDED: V GS(th) typical]
On-State Resistance (R DS(on)) — [DATA_NEEDED: R DS(on) at V GS = 10 V]
Total Gate Charge (Q G) — [DATA_NEEDED: Q G typical]

Spek dan Sumber

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