IPL60R085P7AUMA1 vs IPB60R040CFD7ATMA1 Comparison
Detailed side-by-side comparison of IPL60R085P7AUMA1 by Infineon and IPB60R040CFD7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPL60R085P7AUMA1
IPL60R085P7AUMA1 - 600V 85mΞ© CoolMOS P7 MOSFET | Infineon
IPL60R085P7AUMA1 β ActiveInfineon
IPB60R040CFD7ATMA1 - 600V 50A 40mΞ© CoolMOS CFD7 MOSFET | Infineon
IPB60R040CFD7ATMA1 β ActiveSpecification Comparison
| Parameter | IPL60R085P7AUMA1 | IPB60R040CFD7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.65 | $5.19 |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID, Tc=25Β°C) | 39 A | 50 A |
| Continuous Drain Current (ID, Tc=100Β°C) | 24 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance (RDS(on)) | 85 mΞ© at VGS=10 V | β |
| Gate Threshold Voltage (VGS(th)) | 3.5 V | β |
| Maximum Power Dissipation (Ptot) | 154 W | β |
| Operating Junction Temperature | -40 Β°C to +150 Β°C | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | β |
| ESD Robustness (HBM) | >2 kV (all pins) | β |
| Technology | CoolMOS P7 superjunction (7th generation) | Superjunction (SJ) N-Channel MOSFET |
| Package | PG-VSON-4 (VSON-4, source-down) | PG-TO263-3-2 (D2PAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Qualification | JEDEC industrial | β |
| Polarity | N-channel | β |
| RoHS Status | Compliant | Compliant |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | CoolMOS CFD7 |
| On-Resistance RDS(on) max @ VGS=10V | β | 40 mΞ© |
| Gate Threshold Voltage VGS(th) typ | β | 4 V |
| Total Gate Charge Qg typ | β | [DATA_NEEDED: Qg] |
| Power Dissipation (Tc=25Β°C) | β | 227 W |
| Operating Temperature Range | β | -55Β°C to +150Β°C |
| Integrated Body Diode | β | Yes - ultra-fast CoolMOS CFD7 diode |
| MSL Level | β | 1 |
| Lead-Free | β | Yes |
| Target Applications | β | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) |