IPL60R085P7AUMA1 vs IPB60R040CFD7ATMA1 比較

詳細並排比較 IPL60R085P7AUMA1 由 Infineon 與 IPB60R040CFD7ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPL60R085P7AUMA1 IPL60R085P7AUMA1 - 600V 85mΩ CoolMOS P7 MOSFET | Infineon

IPL60R085P7AUMA1 - 600V 85mΩ CoolMOS P7 MOSFET | Infineon

IPL60R085P7AUMA1 ✓ 啟用中
Infineon
IPB60R040CFD7ATMA1 IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon

IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon

IPB60R040CFD7ATMA1 ✓ 啟用中

規格比較

參數 IPL60R085P7AUMA1 IPB60R040CFD7ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
庫存狀態 — In Stock
單價 (USD) — $5.19
Drain-Source Voltage (VDS) 600 V 600 V
Continuous Drain Current (ID, Tc=25°C) 39 A 50 A
Continuous Drain Current (ID, Tc=100°C) 24 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Static Drain-Source On-Resistance (RDS(on)) 85 mΩ at VGS=10 V —
Gate Threshold Voltage (VGS(th)) 3.5 V —
Maximum Power Dissipation (Ptot) 154 W —
工作接面溫度 -40 °C to +150 °C —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
ESD Robustness (HBM) >2 kV (all pins) —
Technology CoolMOS P7 superjunction (7th generation) Superjunction (SJ) N-Channel MOSFET
封裝 PG-VSON-4 (VSON-4, source-down) PG-TO263-3-2 (D2PAK)
安裝類型 Surface Mount Surface Mount
Qualification JEDEC industrial —
Polarity N-channel —
RoHS 狀態 Compliant Compliant
Manufacturer — Infineon Technologies
Product Family — CoolMOS CFD7
On-Resistance RDS(on) max @ VGS=10V — 40 mΩ
Gate Threshold Voltage VGS(th) typ — 4 V
Total Gate Charge Qg typ — [DATA_NEEDED: Qg]
功率耗散 (TC=25°C) — 227 W
工作溫度範圍 — -55°C to +150°C
Integrated Body Diode — Yes - ultra-fast CoolMOS CFD7 diode
MSL 等級 — 1
Lead-Free — Yes
Target Applications — Soft-switching topologies (ZVS phase-shift full-bridge, LLC)

資料表與資源

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