IPL60R085P7AUMA1 vs IPB60R040CFD7ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPL60R085P7AUMA1 sa pamamagitan ng Infineon at IPB60R040CFD7ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPL60R085P7AUMA1 IPL60R085P7AUMA1 - 600V 85mΩ CoolMOS P7 MOSFET | Infineon

IPL60R085P7AUMA1 - 600V 85mΩ CoolMOS P7 MOSFET | Infineon

IPL60R085P7AUMA1 ✓ Nakahanda
Infineon
IPB60R040CFD7ATMA1 IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon

IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon

IPB60R040CFD7ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPL60R085P7AUMA1 IPB60R040CFD7ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Katayuan ng Stock — In Stock
Presyo ng Yunit (USD) — $5.19
Drain-Source Voltage (VDS) 600 V 600 V
Continuous Drain Current (ID, Tc=25°C) 39 A 50 A
Continuous Drain Current (ID, Tc=100°C) 24 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Static Drain-Source On-Resistance (RDS(on)) 85 mΩ at VGS=10 V —
Gate Threshold Voltage (VGS(th)) 3.5 V —
Maximum Power Dissipation (Ptot) 154 W —
Temperature ng Junction na Operasyon -40 °C to +150 °C —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
ESD Robustness (HBM) >2 kV (all pins) —
Technology CoolMOS P7 superjunction (7th generation) Superjunction (SJ) N-Channel MOSFET
Packhaging PG-VSON-4 (VSON-4, source-down) PG-TO263-3-2 (D2PAK)
Uri ng Pagpapasok Surface Mount Surface Mount
Qualification JEDEC industrial —
Polarity N-channel —
Tindminan RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Product Family — CoolMOS CFD7
On-Resistance RDS(on) max @ VGS=10V — 40 mΩ
Gate Threshold Voltage VGS(th) typ — 4 V
Total Gate Charge Qg typ — [DATA_NEEDED: Qg]
Pwersang Pinahihigpit (TC=25°C) — 227 W
Hanay ng Temperature na Operasyon — -55°C to +150°C
Integrated Body Diode — Yes - ultra-fast CoolMOS CFD7 diode
Level ng MSL — 1
Lead-Free — Yes
Target Applications — Soft-switching topologies (ZVS phase-shift full-bridge, LLC)

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