IPN95R1K2P7ATMA1 vs IPN80R4K5P7ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPN95R1K2P7ATMA1 sa pamamagitan ng Infineon at IPN80R4K5P7ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPN95R1K2P7ATMA1 IPN95R1K2P7ATMA1 - 950V CoolMOS P7 N-Channel MOSFET | Infineon

IPN95R1K2P7ATMA1 - 950V CoolMOS P7 N-Channel MOSFET | Infineon

IPN95R1K2P7ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPN95R1K2P7ATMA1 IPN80R4K5P7ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel N-Channel
Technology CoolMOS P7 (Super Junction) CoolMOS Superjunction (SJ)
Drain-to-Source Voltage (V_DSS) 950 V —
Continuous Drain Current (I_D) at T_C 6 A —
Maximum On-Resistance R_DS(on) at V_GS=10V 1200 mOhm (1.2 Ohm) —
Gate Drive Voltage (max R_DS(on)) 10 V —
Power Dissipation (T_C) 7 W —
Packhaging SOT-223-3 (PG-SOT223) PG-SOT223 (surface mount, 3-pin + tab)
Uri ng Pagpapasok Surface Mount Surface Mount
Bilang ng Pin 3 (2 + Tab) —
Series CoolMOS P7 —
Hanay ng Temperature na Operasyon -55C to +150C —
Packaging Tape & Reel —
Tindminan RoHS Compliant Compliant
Part Status Active —
Manufacturer — Infineon Technologies
Product Family — CoolMOS P7
Drain-Source Voltage (VDS) — 800 V
Continuous Drain Current (ID, Tc) — 1.5 A
Power Dissipation (Pd, Tc) — 6 W
On-Resistance (RDS(on), VGS=10V) — 4.5 ohm max
Operating Mode — Enhancement-mode
Grade — Industrial
Application — Low-power SMPS, flyback converters, LED drivers
Reel / Tape Packaging — Tape & Reel (T/R)

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