IPN95R1K2P7ATMA1 vs IPN80R4K5P7ATMA1 比較

詳細並排比較 IPN95R1K2P7ATMA1 由 Infineon 與 IPN80R4K5P7ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPN95R1K2P7ATMA1 IPN95R1K2P7ATMA1 - 950V CoolMOS P7 N-Channel MOSFET | Infineon

IPN95R1K2P7ATMA1 - 950V CoolMOS P7 N-Channel MOSFET | Infineon

IPN95R1K2P7ATMA1 ✓ 啟用中

規格比較

參數 IPN95R1K2P7ATMA1 IPN80R4K5P7ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel N-Channel
Technology CoolMOS P7 (Super Junction) CoolMOS Superjunction (SJ)
Drain-to-Source Voltage (V_DSS) 950 V —
Continuous Drain Current (I_D) at T_C 6 A —
Maximum On-Resistance R_DS(on) at V_GS=10V 1200 mOhm (1.2 Ohm) —
Gate Drive Voltage (max R_DS(on)) 10 V —
Power Dissipation (T_C) 7 W —
封裝 SOT-223-3 (PG-SOT223) PG-SOT223 (surface mount, 3-pin + tab)
安裝類型 Surface Mount Surface Mount
腳位數 3 (2 + Tab) —
Series CoolMOS P7 —
工作溫度範圍 -55C to +150C —
Packaging Tape & Reel —
RoHS 狀態 Compliant Compliant
Part Status Active —
Manufacturer — Infineon Technologies
Product Family — CoolMOS P7
Drain-Source Voltage (VDS) — 800 V
Continuous Drain Current (ID, Tc) — 1.5 A
Power Dissipation (Pd, Tc) — 6 W
On-Resistance (RDS(on), VGS=10V) — 4.5 ohm max
Operating Mode — Enhancement-mode
Grade — Industrial
Application — Low-power SMPS, flyback converters, LED drivers
Reel / Tape Packaging — Tape & Reel (T/R)

資料表與資源

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