IPN95R3K7P7ATMA1 vs IAUCN10S7N021ATMA1 Comparison

Detailed side-by-side comparison of IPN95R3K7P7ATMA1 by Infineon and IAUCN10S7N021ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPN95R3K7P7ATMA1 IAUCN10S7N021ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.44 $2.05
Manufacturer Infineon Technologies β€”
Series CoolMOS P7 β€”
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 950 V 100 V
Continuous Drain Current (ID) at Tc 2.0 A 175 A
Power Dissipation (Pd) at Tc 6 W β€”
On-State Resistance (RDS(on)) max 3700 mOhm β€”
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] β€”
Gate Threshold Voltage (VGS(th)) typ [DATA_NEEDED: VGS(th) typ] β€”
Technology Super-junction (CoolMOS P7) OptiMOSβ„’ 7 (trench MOSFET)
Package PG-SOT223 (3-pin + tab, surface mount) PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad
Mounting Type Surface Mount Surface Mount
Operating Junction Temperature -55 C to +150 C -55 Β°C to +175 Β°C
RoHS Status Compliant Compliant
Lead-Free Yes β€”
MSL Level [DATA_NEEDED: MSL rating] β€”
FET Type β€” N-Channel
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current IDM]
RDS(on) max @ VGS=10 V β€” 2.1 mΞ©
Gate-Source Threshold (VGS(th)) typ β€” 3.2 V
Total Gate Charge (Qg) @ VGS=10 V β€” 105 nC
Input Capacitance (Ciss) β€” 2.98 nF
Output Capacitance (Coss) β€” 32 pF
Reverse Transfer Capacitance (Crss) β€” 7.153 nF
Power Dissipation (Pd) @ Tc β€” 217 W
Qualification β€” AEC-Q101 (Automotive)

Datasheets & Resources

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