IPN95R3K7P7ATMA1 vs IAUCN10S7N021ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPN95R3K7P7ATMA1 sa pamamagitan ng Infineon at IAUCN10S7N021ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IPN95R3K7P7ATMA1 IAUCN10S7N021ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Series CoolMOS P7 —
Uri ng Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 950 V 100 V
Continuous Drain Current (ID) at Tc 2.0 A 175 A
Power Dissipation (Pd) at Tc 6 W —
On-State Resistance (RDS(on)) max 3700 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) typ [DATA_NEEDED: VGS(th) typ] —
Technology Super-junction (CoolMOS P7) OptiMOS™ 7 (trench MOSFET)
Packhaging PG-SOT223 (3-pin + tab, surface mount) PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad
Uri ng Pagpapasok Surface Mount Surface Mount
Temperature ng Junction na Operasyon -55 C to +150 C -55 °C to +175 °C
Tindminan RoHS Compliant Compliant
Lead-Free Yes —
Level ng MSL [DATA_NEEDED: MSL rating] —
FET Type — N-Channel
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current IDM]
RDS(on) max @ VGS=10 V — 2.1 mΩ
Gate-Source Threshold (VGS(th)) typ — 3.2 V
Total Gate Charge (Qg) @ VGS=10 V — 105 nC
Input Capacitance (Ciss) — 2.98 nF
Output Capacitance (Coss) — 32 pF
Reverse Transfer Capacitance (Crss) — 7.153 nF
Power Dissipation (Pd) @ Tc — 217 W
Qualification — AEC-Q101 (Automotive)

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