IPN95R3K7P7ATMA1 vs IAUCN10S7N021ATMA1 Perbandingan
Perbandingan bersamaan detil IPN95R3K7P7ATMA1 dari Infineon dan IAUCN10S7N021ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IAUCN10S7N021ATMA1 - 100V N-Ch 2.1mΩ OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7N021ATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IPN95R3K7P7ATMA1 | IAUCN10S7N021ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series | CoolMOS P7 | — |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 950 V | 100 V |
| Continuous Drain Current (ID) at Tc | 2.0 A | 175 A |
| Power Dissipation (Pd) at Tc | 6 W | — |
| On-State Resistance (RDS(on)) max | 3700 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) typ | [DATA_NEEDED: VGS(th) typ] | — |
| Technology | Super-junction (CoolMOS P7) | OptiMOS™ 7 (trench MOSFET) |
| Paket | PG-SOT223 (3-pin + tab, surface mount) | PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Hubung Kerja | -55 C to +150 C | -55 °C to +175 °C |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Level MSL | [DATA_NEEDED: MSL rating] | — |
| FET Type | — | N-Channel |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current IDM] |
| RDS(on) max @ VGS=10 V | — | 2.1 mΩ |
| Gate-Source Threshold (VGS(th)) typ | — | 3.2 V |
| Total Gate Charge (Qg) @ VGS=10 V | — | 105 nC |
| Input Capacitance (Ciss) | — | 2.98 nF |
| Output Capacitance (Coss) | — | 32 pF |
| Reverse Transfer Capacitance (Crss) | — | 7.153 nF |
| Power Dissipation (Pd) @ Tc | — | 217 W |
| Qualification | — | AEC-Q101 (Automotive) |